au.\*:("MICHEL AE")
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DISLOCATION REACTIONS IN ARSENIC-IMPLANTED AND ANNEALED SILICON.MADER S; MICHEL AE.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 2; PP. 793-805; ABS. ALLEM.; BIBL. 12 REF.Article
A TECHNIQUE FOR MEASURING, DISPLAYING, RECORDING, AND MODIFYING THE SPATIAL UNIFORMITY OF IMPLANTED IONS.HAMMER WN; MICHEL AE.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 2161-2164; BIBL. 23 REF.Article
ANNEALING PROPERTIES OF ION-IMPLANTED P-N JUNCTIONS IN SILICON.MICHEL AE; FANG FF; PAN ES et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 7; PP. 2991-2996; BIBL. 10 REF.Article
SHALLOW JUNCTIONS BY HIGH-DOSE AS IMPLANTS IN SI: EXPERIMENTS AND MODELINGTSAI MY; MOREHEAD FF; BAGLIN JEE et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3230-3235; BIBL. 21 REF.Article